View BLF861A_249706.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861A UHF power LDMOS transistor
Product specification Supersedes data of 2000 Aug 04 2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Designed to withstand abrupt load mismatch errors * Source on underside eliminates DC isolators; reducing common mode inductance * Designed for broadband operation (UHF band) * Internal input and output matching for high gain and optimum broadband operation.
1 2
BLF861A
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION
APPLICATIONS * Communication transmitter applications in the UHF frequency range.
3 4
MBK777
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ. 170 (peak sync)
Top view
Fig.1 Simplified outline.
Gp (dB) >13.5 typ. 14.5 >14
D (%) >50 >40
Gp (dB) 1 note 1
Note 1. Sync compression: input sync 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS - - - - -65 - MIN. 65 15 18 318 +150 200 MAX. V V A W C C UNIT
2001 Feb 09
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 318 W
BLF861A
VALUE 0.55 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 C; per section; unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values without internal matching. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0; VDS = 32 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz
(1)
MIN. 65 4 - 18 - - - - -
TYP. - - - - - 4 160 82 40 6
MAX. - 5.5 2.2 - 25 - - - - -
UNIT V V A A nA S m pF pF pF
VGS = 0; VDS = 32 V; f = 1 MHz (1) -
(1)
handbook, halfpage
100 Coss (pF) 80
MLD510
60
40
20
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.2
Output capacitance as a function of drain-source voltage; typical values per section.
2001 Feb 09
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
APPLICATION INFORMATION RF performance in a common source 860 MHz test circuit. Th = 25 C; Rth mb-h = 0.15 K/W; unless otherwise specified. MODE OF OPERATION CW; class-AB 2-tone; class-AB PAL BG (TV); class-AB f (MHz) 860 f1 = 860 f1 = 860.1 860 (ch 69) VDS (V) 32 32 32 IDQ (A) 1 1 1 PL (W) 150 150 (PEP) > 150 typ. 170 (peak sync) Gp (dB) >13.5 typ. 14.5 >14 >14 D (%) >50 >40 >40 dIm (dBc) - -25 - Gp (dB) 1 - note 1
Note 1. Sync compression: input sync 33%; output sync 27% measured in an 860 MHz test circuit. Ruggedness in class-AB operation The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition.
handbook, halfpage
12
MCD871
handbook, halfpage
10
MCD872
zi ()
xi
ZL () 5
RL
8
4
ri
0 XL
0 400
500
600
700
800 900 f (MHz)
-5 400
500
600
700
800 900 f (MHz)
CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 C.
CW, class-AB operation; VDS = 32 V; IDQ = 1 A; PL = 170 W (total device); Th = 25 C.
Fig.3
Input impedance as a function of frequency (series components); typical push-pull values.
Fig.4
Load impedance as a function of frequency (series components); typical push-pull values.
2001 Feb 09
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
handbook, halfpage
20
MLD514
80 D (%) 60
handbook, halfpage
0
MLD515
Gp (dB) 15
Gp
dim (dBc) -20 d3
D 10 40 -40
d5
5
20
-60
0 0 100
0 200 300 PL (PEP) (W)
-80
0
100
200 300 PL (PEP) (W)
Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 860 MHz (-6 dB); f2 = 860.1 MHz (-6 dB) measured in an 860 MHz test circuit.
Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 860 MHz (-6 dB); f2 = 860.1 MHz (-6 dB) measured in an 860 MHz test circuit.
Fig.5
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.6
Intermodulation distortion as a function of peak envelope output power; typical values.
handbook, halfpage
20
MLD516
80 D (%) 60
Gp (dB) 15 Gp
D 10 40
5
20
0 0 50 100 150
0 250 200 PL (W)
Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 860 MHz; measured in an 860 MHz test circuit.
Fig.7
Power gain and drain efficiency as functions of load power; typical values.
2001 Feb 09
5
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 2001 Feb 09
R2 +Vbias C19 C18 R3 R4 L1 C16 50 input R5 B1 C2 C3 L4 C17 R6 L2 L6 L8 L10 L12 L14 C4 L3 C9 C1 C5 C6 R1 C7 C8 C10 L 19 C14 C11 C12 C13 L16 L5 L9 L7 L11 L13 L15 C20 C21 L17 B2 C15 C25 50 output L18 C24 C26
Philips Semiconductors
handbook, full pagewidth
UHF power LDMOS transistor
+VS
6
C22
C23
MCD876
Product specification
BLF861A
Fig.8 Class-AB common source broadband test circuit.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components class-AB broadband test circuit (see Figs 8 and 9) COMPONENT C1 C2 C3, C6, C9 C4 C5 C7 C8 C10, C11 C12, C13 C14 C15 C16, C17 C18 C19, C26 C20, C21, C22, C23 C24 C25 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13, L14 L15, L16 L17 L18 L19 B1 B2 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tekelec trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 3 multilayer ceramic chip capacitor; note 3 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 2 electrolytic capacitor multilayer ceramic chip capacitor stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 ferrite wire inductor (hairpin) semi rigid coax balun UT70-25 semi rigid coax balun UT70-25 length = 17 mm Z = 25 1.5 70 mm Z = 25 1.5 48.5 mm VALUE 20 pF 4.3 pF 0.6 to 4.5 pF 9.1 pF 10 pF 5.1 pF 13 pF 8.2 pF 6.8 pF 1 pF 20 pF 1 nF 100 nF 100 F 100 pF 1000 F 1 F 30.6 x 2.4 mm 28 x 2.4 mm 10 x 5 mm 20 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm DIMENSIONS
BLF861A
CATALOGUE No.
2222 595 16754
2001 Feb 09
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
COMPONENT R1 R2 R3 R4 R5, R6 Notes resistor resistor resistor resistor
DESCRIPTION
VALUE 33 1 k 100 k 100 3.9
DIMENSIONS
CATALOGUE No.
SMD resistor
1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm.
2001 Feb 09
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
handbook, full pagewidth
95
95
80
+Vbias
+VS C26 R3 2.5 15 C8 R1 C6 C7 C9 C10 C11 L19 8 L18 B2 C20 C14 C21 C22 C25 C23 C24 C15
R2 R4 R5 C16 C1 C17 R6 10 B1 C2 C4 C3
C18 C19
BLF861
C5
C12 C13
2.5
MCD877
Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.9 Printed-circuit board and component layout for class-AB broadband test circuit.
2001 Feb 09
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF861A
handbook, halfpage
16
MLD511
80 D (%) 60
handbook, halfpage
250
MLD512
Gp (dB) 12
Gp
Po sync (W) 200
150
D
100
8
40
50
4 400
500
600
700
20 800 900 f (MHz)
0 400
500
600
700
800 900 f (MHz)
Th = 25 C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit.
Th = 25 C; VCE = 32 V; IDQ = 1 A; PAL BG signal (TV); sync compression: input 33%, output 27%; measured in broadband test circuit.
Fig.10 Power gain and drain efficiency as functions of frequency; typical values.
Fig.11 Peak envelope sync power as a function of frequency; typical values.
handbook, halfpage
16
MLD513
80 D (%) 60
Gp (dB) 12
Gp
D
8
40
4 400
500
600
700
20 800 900 f (MHz)
Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB operation; PL = 150 W; measured in broadband test circuit.
Fig.12 Power gain and drain efficiency as functions of frequency; typical values.
2001 Feb 09
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
BLF861A
SOT540A
D
A F D1
U1 q H1 C w2 M C M
B
c
1
2
H
U2
p
E1 w1 M A M B M
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 8.51 8.26 c 0.15 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.38 3.12 Q 2.72 2.46 q 27.94 U1 34.16 33.91 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25
22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01
15.75 18.72 14.73 18.47
0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380
OUTLINE VERSION SOT540A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-08-27 99-12-28
2001 Feb 09
11
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BLF861A
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Feb 09
12
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF861A
2001 Feb 09
13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF861A
2001 Feb 09
14
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF861A
2001 Feb 09
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A, Tel: +36 1 382 1700, Fax: +36 1 382 1800 India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 71
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/02/pp16
Date of release: 2001
Feb 09
Document order number:
9397 750 07753

▲Up To Search▲

Price & Availability of BLF861A

	To Download BLF861A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .